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MRF8S9100HSR5

Part No MRF8S9100HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 70V 920MHZ NI-780S / RF Mosfet 28 V 500 mA 920MHz 19.3dB 72W NI-780S
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Discontinued
Technology LDMOS
Frequency 920MHz
Gain 19.3dB
Voltage - Test 28 V
Current - Test 500 mA
Power - Output 72W
Voltage - Rated 70 V
Mounting Type Chassis Mount
Package / Case NI-780S
Supplier Device Package NI-780S
Base Product Number MRF8
Standard Package 50 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8541.29.0075
Win Source Part Number 885931-MRF8S9100HSR5
Ultra Librarian 3D Model Ultra Librarian MRF8S9100HSR5 CAD Model

Description

NXP MRF8S9100HSR5 RF Power Transistor

The NXP MRF8S9100HSR5 is a high-performance Radio Frequency (RF) power LDMOS transistor designed for broadband commercial and industrial applications. With an exceptional combination of high efficiency and wide bandwidth capabilities, this device is ideally suited for use in broadcast transmitters, cellular base stations, and a variety of RF energy applications.

Key Features:

  • Frequency Range: The MRF8S9100HSR5 operates over a broad frequency range, making it versatile for multiple RF applications.
  • High Output Power: This device can deliver a high output power of 100 W CW over its entire operating band, ensuring robust performance for demanding applications.
  • High Gain: With a high gain of 18 dB, the transistor amplifies RF signals effectively, which is crucial for high-quality transmission and reception.
  • High Efficiency: The MRF8S9100HSR5 is designed to provide high efficiency, reducing power consumption and heat generation, which is essential for maintaining reliability and longevity in high-power systems.
  • Thermal Performance: The device features excellent thermal performance thanks to its over-molded plastic package, which aids in heat dissipation and ensures stable operation under varying conditions.
  • Ruggedness: Engineered for durability, the transistor can withstand severe load mismatch conditions with high breakdown voltages, making it a reliable choice for critical applications.

Applications:

  • Commercial and Industrial Broadcast Transmitters
  • Cellular Base Station Amplifiers
  • RF Energy and Heating
  • Industrial, Scientific, and Medical (ISM) Applications
  • RF Plasma Lighting

The MRF8S9100HSR5 is a testament to NXP's commitment to providing high-quality, reliable RF solutions. By integrating this powerful LDMOS transistor into your design, you can expect a significant boost in performance, efficiency, and operational longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.8873 $104.8873
2+ $101.5038 $203.0076
3+ $98.1204 $294.3612
4+ $87.9700 $351.8800
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40 pieces
Order Increment : 1 pcs
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