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MW6S010GNR1

Part No MW6S010GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 28V TO270-2 GULL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Active
Technology LDMOS
Frequency 960MHz
Gain 18dB
Voltage - Test 28 V
Current - Test 125 mA
Power - Output 10W
Voltage - Rated 68 V
Mounting Type Surface Mount
Package / Case TO-270BA
Supplier Device Package TO-270-2 GULL
Base Product Number MW6S010
Standard Package 500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 646033-MW6S010GNR1
Ultra Librarian 3D Model Ultra Librarian MW6S010GNR1 CAD Model

Description

The NXP MW6S010GNR1 is a high-performance, wideband RF power transistor designed for a range of applications, including but not limited to, cellular base station transmitters, RF energy, and industrial, scientific, and medical (ISM) applications. This versatile transistor is part of NXP's advanced product lineup, engineered to provide reliable and efficient RF power amplification.

Key Features

  • Frequency Range: The MW6S010GNR1 operates over a broad frequency range, making it suitable for various communication bands and systems.
  • Output Power: It delivers a high output power level, which is essential for applications requiring strong signal amplification.
  • High Gain: The transistor provides high gain, which contributes to its overall efficiency and performance in signal amplification.
  • Efficiency: With its advanced design, the MW6S010GNR1 offers high efficiency, reducing the power consumption and heat generation in systems where it is used.
  • Ruggedness: Engineered for durability, the transistor can withstand harsh operating conditions, making it suitable for industrial and outdoor applications.

Applications

  • Cellular base station transmitters for various standards (GSM, CDMA, WCDMA, LTE)
  • RF energy applications including plasma generation, industrial heating, and medical therapies
  • ISM band applications, such as RFID and microwave ovens
  • Broadcast transmitters for radio and television
  • Aerospace and defense systems requiring robust RF power amplification

Technical Specifications

The MW6S010GNR1 is built with state-of-the-art LDMOS technology, which ensures its high performance in a compact package. It is designed for easy integration into various circuit architectures, with a focus on simplicity and cost-effectiveness without compromising on quality.

Conclusion

With its combination of wide frequency range, high output power, and efficiency, the NXP MW6S010GNR1 is a top choice for designers and engineers looking for a reliable RF power solution. Its ruggedness and versatility across multiple applications underscore NXP's commitment to providing advanced semiconductor technologies that meet the needs of the modern RF landscape.

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