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NX2301P,215

Part No NX2301P,215
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A TO-236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 380pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 1A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096453-NX2301P,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NX2301P,215 CAD Model

Description

Introducing the NXP NX2301P,215 - A Robust MOSFET Solution

The NXP NX2301P,215 is a cutting-edge, high-performance MOSFET that has been meticulously engineered to cater to a wide range of power management applications. This compact yet powerful device is part of NXP's extensive portfolio of semiconductor solutions, designed to offer exceptional efficiency and reliability.

Key Features

  • Low On-Resistance: The NX2301P,215 boasts an incredibly low on-resistance, which significantly reduces conduction losses and enhances overall energy efficiency.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal power loss and heat generation.
  • Advanced Packaging: Enclosed in a compact SOT-23 package, the NX2301P,215 is optimized for space-constrained applications while providing excellent thermal performance.
  • Logic-Level Gate Drive: The device can be driven directly from low-voltage logic signals, making it compatible with modern microcontrollers and reducing the need for additional driver circuitry.

Applications

The versatility of the NX2301P,215 makes it suitable for a diverse array of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Load switches
  • Motor control units

Technical Specifications

The NX2301P,215 is characterized by its impressive technical specifications:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 2A
  • Power Dissipation (P<sub>D): 0.36W
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality, and the NX2301P,215 is no exception. It is manufactured with high-grade materials and subjected to rigorous testing to ensure it meets the stringent standards required for industrial and consumer electronics. With its robust design and proven performance, the NX2301P,215 is a reliable choice for designers looking to optimize their power management systems.

Whether you're developing the next generation of portable devices or working on high-efficiency power supplies, the NXP NX2301P,215 MOSFET is a component that promises to deliver the performance and durability you need.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1887 $50.0055
570+ $0.1768 $100.7760
880+ $0.1708 $150.3040
1,260+ $0.1589 $200.2140
1,640+ $0.1529 $250.7560
2,045+ $0.1469 $300.4105
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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