The NXP PBHV8115TLH is a high voltage, low VCEsat (BISS) transistor that stands out in the field of power management and switching applications. This innovative component is designed to deliver exceptional performance and energy efficiency for a wide range of uses.

Key Features

• High Collector-Emitter Voltage: With a collector-emitter voltage (VCEO) of up to 115 V, the PBHV8115TLH is suitable for circuits that require high voltage handling capabilities.
• Low Collector-Emitter Saturation Voltage: The low VCEsat feature minimizes power loss and heat generation, enhancing the overall efficiency of the device it is incorporated into.
• High Efficiency: The transistor is optimized for low conduction losses, providing a high efficiency solution for power switching applications.
• Compact Design: The PBHV8115TLH comes in a space-saving package, making it ideal for use in applications where PCB real estate is at a premium.

Applications

The versatility of the PBHV8115TLH allows it to be used in a variety of applications, including but not limited to:

• DC-DC converters
• Power management modules
• Load switches
• Charging circuits
• Energy-efficient power supplies

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 115 V Collector Current (IC) 1 A Collector-Emitter Saturation Voltage (VCEsat) TBD Package SOT-23 (TO-236AB)

With its robust design and high voltage capability, the NXP PBHV8115TLH transistor is a reliable choice for designers looking to improve the efficiency and performance of their power management systems.