The KRC114M-AT/P is a silicon NPN epitaxial planar transistor manufactured by KEC (Korea Electronics Co., Ltd.). It's designed for general-purpose amplification and switching applications.

Applications:

• General-purpose amplification
• Switching circuits
• Driver stages
• Linear amplification

Features:

• High current gain (hFE)
• Low saturation voltage
• High collector current capability
• Epitaxial planar structure

Benefits:

• Improved circuit performance due to high gain
• Efficient switching due to low saturation voltage
• Reliable operation in various applications
• Simplified circuit design

Technical Specifications:

The KRC114M-AT/P typically features a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation (PC) of 250mW. The DC current gain (hFE) typically ranges from 120 to 270. The operating and storage junction temperature range is -55°C to +150°C.

This transistor is commonly used in consumer electronics, industrial control systems, and other electronic devices. Its robust design and electrical characteristics make it a versatile choice for various circuit designs. The KRC114M-AT/P is available in a SOT-23 package which allows for a compact assembly on the PCB. Its small size is ideal for space constrained applications.