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PDTB123TK

Part No PDTB123TK
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Typical Gain (hFE) (Min) 100 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SMT3; MPAK
Win Source Part Number 061355-PDTB123TK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTB123TK CAD Model

Description

The NXP PDTB123TK is a state-of-the-art PNP bipolar digital transistor that serves as a critical component in modern electronics. Designed for high efficiency, this transistor combines a robust transistor chip and a resistor network in a single SOT23 package, which makes it an ideal choice for space-constrained applications.

Key Features

  • Integrated Bias Resistor: The PDTB123TK comes with an integrated bias resistor to simplify circuit design, reducing component count and saving valuable board space.
  • High Collector Current: This transistor is capable of handling a substantial collector current, making it suitable for a wide range of applications that require high current handling capability.
  • Low V<sub>CEsat: The low collector-emitter saturation voltage ensures efficient operation with minimal power loss, which is crucial for battery-powered devices.
  • Compact SOT23 Package: The small footprint of the SOT23 package allows for high-density mounting and is ideal for automated assembly processes.
  • Lead-Free and RoHS Compliant: In line with environmental regulations, the PDTB123TK is lead-free and RoHS compliant, making it suitable for use in green products.

Applications

The versatility of the NXP PDTB123TK allows it to be used in a broad spectrum of applications. It is particularly well-suited for:

  • Switching and amplification in digital and analog circuits
  • Power management modules
  • Signal processing units
  • Interface circuits
  • Driver circuits for relays, lamps, and LEDs

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 50V Collector Current (I<sub>C) 100mA Power Dissipation (P<sub>D) 250mW Resistor Ratio 1:1 Operating Temperature Range -55°C to +150°C

In conclusion, the NXP PDTB123TK is a reliable and efficient solution for designers looking to optimize their circuit designs with a high-performance PNP transistor that offers simplicity and compactness without compromising on quality.

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