Product Overview: PDTC115EE,115 - NXP

The PDTC115EE,115 is a high-performance, low-power transistor manufactured by NXP Semiconductors, designed for a wide range of applications. This device is part of NXP's innovative portfolio of transistors that are known for their reliability and efficiency. The PDTC115EE,115 offers a compact solution for designers looking to optimize their circuit designs with minimal power loss and space requirements.

Key Features

• Device Type: Resistor-Equipped Transistor (RET)
• Configuration: Single
• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 10V
• Continuous Collector Current (IC): 100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 100 at 10mA, 5V
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-416 (SC-75)

Applications

The PDTC115EE,115 is versatile and can be used in various applications, including but not limited to:

• Automotive systems
• Power management circuits
• Switching and amplification
• Signal processing
• Consumer electronics

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PDTC115EE,115 is built to meet stringent industry standards, ensuring performance and durability across a broad range of operating conditions. With its robust design, the PDTC115EE,115 is a reliable choice for engineers and designers who demand excellence and longevity from their components.

Environmental Compliance

The PDTC115EE,115 is RoHS compliant, reflecting NXP's dedication to environmental responsibility. This compliance ensures that the transistor is free from harmful substances, making it suitable for use in environmentally-sensitive applications and contributing to the reduction of electronic waste.