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PEMD17

Part No PEMD17
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 209819-PEMD17
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMD17 CAD Model

Description

PEMD17 - NXP High-Efficiency MOSFET

The PEMD17 is a state-of-the-art, dual N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. Designed for high-speed switching applications, this product is a testament to NXP's commitment to providing innovative and energy-efficient solutions to the electronics industry.

Key Features

  • Low On-Resistance: The PEMD17 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in circuit operation.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET minimizes switching losses, making it ideal for high-frequency applications such as power supplies and DC-DC converters.
  • Dual N-Channel Configuration: The dual N-channel setup enables the device to handle more current and power, providing a compact solution for applications requiring two separate N-channel MOSFETs.
  • Small Package Size: The PEMD17 is available in a small SOT-23 package, which is perfect for space-constrained applications without compromising on performance.
  • Low Threshold Voltage: With a low gate threshold voltage, the PEMD17 ensures low-voltage operation, which is crucial for battery-powered and portable devices.

Applications

The versatility of the PEMD17 allows it to be used in a wide array of applications. It is particularly suited for:

  • Power management circuits
  • DC-DC converters
  • Battery powered devices
  • Load switches
  • Motor control systems

Technical Specifications

The PEMD17 offers robust electrical characteristics that cater to demanding applications:

  • Drain-Source Voltage (VDS): 30 V
  • Continuous Drain Current (ID): 3.1 A
  • Power Dissipation (PD): 1.25 W
  • Operating Temperature Range: -55°C to 150°C

As a product of NXP Semiconductors, a leader in the semiconductor industry, the PEMD17 is backed by rigorous testing and quality assurance, ensuring reliability and performance for critical applications. With its combination of efficiency, speed, and compact form factor, the PEMD17 is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2486 $62.4300
115+ $1.0245 $117.8175
175+ $0.9933 $173.8275
245+ $0.9610 $235.4450
315+ $0.9286 $292.5090
420+ $0.8328 $349.7760
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 19,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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