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PHD45N03L

Part No PHD45N03L
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209900-PHD45N03L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PHD45N03L CAD Model

Description

PHD45N03L - NXP Semiconductors

The PHD45N03L is a robust TrenchMOS™ logic level FET designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This particular product is a part of NXP's extensive line of power MOSFETs that are engineered to deliver high efficiency and power density in various applications. The PHD45N03L is optimized for logic level drive, making it highly suitable for use in modern low-voltage circuits.

Key Features:

  • Low Threshold Voltage: The device features a low threshold voltage, which allows it to be driven directly by logic level voltages, making it compatible with today's low-voltage microcontrollers and digital ICs.
  • High-Speed Switching: With fast switching capabilities, the PHD45N03L is ideal for high-frequency applications, contributing to improved overall system efficiency.
  • High Current Capability: This MOSFET can handle continuous drain currents up to 45A, making it suitable for high-power applications.
  • Low On-State Resistance (R<sub>DS(on)): Minimizing on-state resistance is critical for power efficiency, and the PHD45N03L excels with a low R<sub>DS(on), reducing power losses during operation.
  • Enhanced Durability: The device is encapsulated in a robust SOT78 (TO-220AB) package, which ensures thermal efficiency and mechanical durability under various operating conditions.

Applications:

The versatility of the PHD45N03L allows it to be used in a wide array of applications. It is particularly well-suited for:

  • DC/DC converters and power management circuits
  • Motor drives and controllers
  • Switching regulators
  • Power supplies for computer, telecom, and consumer electronics
  • Automotive systems and lighting

Quality and Reliability:

NXP Semiconductors ensures that the PHD45N03L, like all of their products, meets the highest quality and reliability standards. This component is designed to provide a long operational lifespan even in demanding environments, making it a reliable choice for designers and engineers seeking performance and durability.

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