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PHP112N06T

Part No PHP112N06T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 4352pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 061486-PHP112N06T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHP112N06T CAD Model

Description

The PHP112N06T is a high-performance, N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This field-effect transistor (FET) is engineered to deliver efficient power control and conversion in a wide array of electronic applications. Its robust design and advanced technology make it an ideal choice for high-efficiency power supplies, DC-DC converters, motor drives, and other power management tasks.

Key Features

  • Low On-State Resistance: The PHP112N06T boasts an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency in power circuits.
  • High Current Capability: With the ability to handle high continuous drain currents, this transistor is suitable for applications requiring robust current handling capacity.
  • High-Speed Switching: The device is optimized for fast switching, which is crucial for reducing switching losses and improving performance in high-frequency power conversion systems.
  • Advanced TrenchMOS Technology: Utilizing NXP's TrenchMOS technology, the PHP112N06T offers superior performance in terms of gate charge, threshold voltage, and energy efficiency.
  • Thermal Performance: The transistor's package is designed to enhance thermal dissipation, ensuring reliable operation even under high temperature conditions.

Applications

The PHP112N06T is versatile and can be used in various applications that require high power density and efficiency. Some of the typical applications include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Management for Computer Servers
  • Motor Control Circuits
  • Automotive Electronics
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and the PHP112N06T is no exception. The product is manufactured to meet the highest industry standards for performance and reliability, ensuring a long operational life and consistent performance in even the most demanding conditions.

Whether you are designing a new power system or upgrading an existing one, the PHP112N06T from NXP offers the efficiency, reliability, and high performance needed to meet your power management requirements.

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