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PHU97NQ03LT,127

Part No PHU97NQ03LT,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 75A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 11.7nC @ 4.5V
Max Input Capacitance 1570pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1087848-PHU97NQ03LT,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHU97NQ03LT,127 CAD Model

Description

The PHU97NQ03LT,127 is a high-performance, N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This field-effect transistor (FET) is specifically engineered to deliver efficient power management and conversion in a wide range of electronic applications. Its robust design and advanced technology make it an excellent choice for both professional and hobbyist projects that require reliable and efficient power transistors.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be driven by low-voltage control signals, making it suitable for interfacing with modern microcontrollers and digital circuits.
  • High-Speed Switching: With its fast switching capabilities, the PHU97NQ03LT,127 is ideal for high-frequency applications, including switch-mode power supplies and DC-DC converters.
  • Low On-State Resistance: The low on-state resistance (R<sub>DS(on)) minimizes power loss and heat generation, enhancing the overall efficiency of the system in which it is used.
  • High Continuous Current: The transistor is capable of handling high continuous drain currents, making it suitable for high-power applications.
  • Robust Thermal Performance: Designed with an excellent thermal conduction path, this product can operate reliably at higher temperatures, ensuring performance stability under various conditions.

Applications

The versatility of the PHU97NQ03LT,127 allows it to be utilized in a diverse array of applications. It is particularly well-suited for:

  • Power management in computing devices such as laptops, servers, and desktops.
  • DC motor control circuits in automotive and industrial environments.
  • Load switching in smart home systems and IoT devices.
  • Power supplies for telecommunications and networking equipment.

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 45W Operating Temperature Range -55°C to +175°C

In summary, the PHU97NQ03LT,127 from NXP Semiconductors is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of power management tasks. Its low on-state resistance, high-speed switching, and high current handling capabilities make it a top choice for designers and engineers looking to optimize their power systems.

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