The NXP PMGD290XN is a high-performance, dual N-channel Trench MOSFET designed to deliver efficient power management within a compact footprint. This advanced power solution is ideal for a variety of applications, including but not limited to, mobile devices, computing systems, and power distribution networks.

Key Features

• Low On-Resistance: The PMGD290XN features an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power losses and improved efficiency in switching applications.
• Dual N-Channel Configuration: Its dual N-channel setup allows for flexibility in design, enabling the integration of two MOSFETs in a single package for space-saving circuit designs.
• High-Speed Switching: Engineered for high-speed switching, the PMGD290XN ensures minimal delay times, which is critical for high-frequency applications.
• Power-SO8 Package: Encased in a Power-SO8 package, the device boasts a small footprint without compromising on thermal performance, making it suitable for compact designs with limited PCB space.
• Low Threshold Voltage: The device operates at a low threshold voltage, ensuring low-voltage drive capability and compatibility with modern microcontrollers and logic-level circuits.

Applications

The versatility of the PMGD290XN MOSFET makes it an excellent choice for a wide range of applications. It is particularly well-suited for:

• DC/DC converters
• Power management modules
• Battery powered devices
• Load switches
• Motor control circuits

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30 V Continuous Drain Current (I<sub>D) 8 A Power Dissipation (P<sub>D) 1.25 W R<sub>DS(on) Max @ V<sub>GS=10V 20 mΩ

With its robust electrical characteristics and compact design, the NXP PMGD290XN MOSFET is a reliable and efficient solution for modern electronic applications that require high-density power management.