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PMN34LN,135

Part No PMN34LN,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 13.1nC @ 10V
Max Input Capacitance 500pF @ 20V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.75W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 004404-PMN34LN,135
Popularity Medium
Supply and Demand Status Balance
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN34LN,135 CAD Model

Description

The PMN34LN,135 is a high-performance, low-power MOSFET produced by NXP Semiconductors, a leader in the electronic components industry. This product is designed to meet the rigorous requirements of modern electronic applications, offering a superb combination of efficiency, reliability, and power density.

Key Features

  • Low On-Resistance: The PMN34LN,135 boasts a very low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, making it an ideal choice for high-frequency applications, such as power supplies and converters.
  • Low Threshold Voltage: With a low threshold voltage, this device ensures low-voltage operation, which is critical for battery-powered and energy-sensitive applications.
  • Advanced Packaging: The PMN34LN,135 comes in a compact, surface-mount package that allows for a smaller footprint and is suitable for high-density PCB layouts.

Applications

The versatility of the PMN34LN,135 MOSFET makes it suitable for a wide range of applications, including:

  • Power management in portable and wearable devices
  • DC/DC converters for telecommunications and computing
  • Motor control circuits in automotive and industrial settings
  • Load switching in battery management systems

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 6.7A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PMN34LN,135 is subjected to rigorous testing and quality control measures to ensure it meets the industry's highest standards for performance and reliability.

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