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PMN35EN,115

Part No PMN35EN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.1A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 9.3nC @ 10V
Max Input Capacitance 334pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 31 mOhm @ 5.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 004405-PMN35EN,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMN35EN,115 CAD Model

Description

The PMN35EN,115 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a global leader in the semiconductor industry. This product is part of NXP's extensive portfolio of field-effect transistors, renowned for their high efficiency and reliability.

Key Features

  • Low On-Resistance: The PMN35EN,115 features a low on-resistance, which reduces power loss and improves overall efficiency when the transistor is in the 'on' state.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, making it suitable for power management in modern electronic devices.
  • Energy Efficiency: With its low power consumption and minimal heat generation, the PMN35EN,115 is an eco-friendly choice for designers looking to create energy-efficient systems.
  • Compact Size: The small footprint of the PMN35EN,115 makes it ideal for space-constrained applications without compromising on performance.

Applications

The versatility of the PMN35EN,115 MOSFET allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Computing and telecommunications

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 3.1A Power Dissipation (P<sub>D) 1.25W Operating Temperature -55°C to +150°C

Quality and Reliability

NXP's commitment to quality ensures that the PMN35EN,115 MOSFET meets the highest standards for performance and reliability. The product is rigorously tested to withstand harsh environments and provide consistent operation over its lifespan.

Ordering Information

The PMN35EN,115 is available for order in various quantities to meet the needs of both small-scale projects and large-volume production. For detailed ordering information and pricing, please contact an NXP authorized distributor or visit the NXP website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.3132 $63.9396
7+ $17.4879 $122.4153
11+ $16.9404 $186.3444
15+ $16.3941 $245.9115
19+ $15.8478 $301.1082
25+ $14.2088 $355.2200
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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