The PMN35EN,115 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a global leader in the semiconductor industry. This product is part of NXP's extensive portfolio of field-effect transistors, renowned for their high efficiency and reliability.
Key Features
- Low On-Resistance: The PMN35EN,115 features a low on-resistance, which reduces power loss and improves overall efficiency when the transistor is in the 'on' state.
- High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, making it suitable for power management in modern electronic devices.
- Energy Efficiency: With its low power consumption and minimal heat generation, the PMN35EN,115 is an eco-friendly choice for designers looking to create energy-efficient systems.
- Compact Size: The small footprint of the PMN35EN,115 makes it ideal for space-constrained applications without compromising on performance.
Applications
The versatility of the PMN35EN,115 MOSFET allows it to be used in a wide range of applications. It is particularly well-suited for:
- Power supply units
- DC-DC converters
- Motor control systems
- LED lighting solutions
- Computing and telecommunications
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
30V
Continuous Drain Current (I<sub>D)
3.1A
Power Dissipation (P<sub>D)
1.25W
Operating Temperature
-55°C to +150°C
Quality and Reliability
NXP's commitment to quality ensures that the PMN35EN,115 MOSFET meets the highest standards for performance and reliability. The product is rigorously tested to withstand harsh environments and provide consistent operation over its lifespan.
Ordering Information
The PMN35EN,115 is available for order in various quantities to meet the needs of both small-scale projects and large-volume production. For detailed ordering information and pricing, please contact an NXP authorized distributor or visit the NXP website.