The PMR400UN from NXP Semiconductors is a state-of-the-art MOSFET designed to meet the demanding requirements of modern electronic applications. This high-performance, N-channel TrenchMOS transistor is an ideal choice for a wide range of power management tasks, offering efficiency, reliability, and power density in a compact, surface-mount package.
Key Features
- Low On-State Resistance: The PMR400UN boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
- High-Speed Switching: Engineered for fast switching performance, this MOSFET enables high-frequency operation, which is crucial for applications such as DC-DC converters, motor control, and power supplies.
- Enhanced Power Density: Its compact, surface-mount package allows for a high power density, making it suitable for space-constrained applications.
- Thermal Management: The PMR400UN is designed with excellent thermal characteristics, ensuring stable performance even under high temperature conditions.
Applications
The versatility of the PMR400UN allows it to be integrated into a variety of applications, including:
- Load switches
- Battery management systems
- Power supply modules
- Motor control circuits
- DC-DC converters
- Computing and server power systems
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
30 V
Continuous Drain Current (I<sub>D)
3.1 A
Power Dissipation (P<sub>D)
1.25 W
On-State Resistance (R<sub>DS(on))
100 mΩ
Package
SOT-883B
With its robust design and advanced technology, the NXP PMR400UN MOSFET is a reliable solution for designers looking to optimize power management in their next-generation electronic devices.