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PSMN013-80YS,115

Part No PSMN013-80YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 60A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 2420pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 107460-PSMN013-80YS,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN013-80YS,115 CAD Model

Description

Product Overview: PSMN013-80YS,115 - NXP Semiconductors

The PSMN013-80YS,115 is a high-performance N-channel MOSFET produced by NXP Semiconductors, a leader in the field of high-quality electronic components. This particular MOSFET is designed to deliver efficient power management and conversion in a variety of applications, ranging from computing and networking to industrial and automotive systems.

Key Features and Benefits

  • Low On-State Resistance: The PSMN013-80YS,115 boasts an extremely low on-state resistance (R<sub>DS(on)) of only 13 mΩ at a gate drive of 10V. This characteristic ensures minimal power loss and heat generation during operation, making it ideal for high-efficiency power systems.
  • High Current Capability: With the ability to handle continuous drain currents up to 100A, this MOSFET can manage high-power applications with ease, ensuring reliable performance even under demanding conditions.
  • Advanced TrenchMOS Technology: Utilizing NXP's cutting-edge TrenchMOS silicon technology, the PSMN013-80YS,115 offers superior switching performance and reduced gate charge, leading to faster switching speeds and improved overall efficiency.
  • Robust Thermal Performance: The device is encapsulated in a TO-220 package, known for its excellent thermal characteristics. This package design allows for effective heat dissipation, contributing to the MOSFET's stability and longevity.
  • Wide Operating Temperature Range: The MOSFET operates over a broad temperature range from -55°C to +175°C, making it suitable for harsh environments and ensuring consistent performance across various temperature scenarios.

Applications

The PSMN013-80YS,115 is versatile and can be used in a wide array of electronic circuits and systems. Its applications include, but are not limited to:

  • DC-DC converters and power supplies for computers and servers
  • Motor drives and controllers in industrial automation
  • Power management circuits in automotive applications
  • Switching regulators and synchronous rectification

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality. The PSMN013-80YS,115 is no exception, with rigorous testing and quality control measures in place to ensure reliability and performance in line with industry standards. Customers can trust this MOSFET to meet their power management needs with efficiency and resilience.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5714 $50.1426
22+ $4.5715 $100.5730
34+ $4.4286 $150.5724
47+ $4.2857 $201.4279
61+ $4.1429 $252.7169
81+ $3.7143 $300.8583
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,090 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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