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PSMN030-150P,127

Part No PSMN030-150P,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 55.5A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 55.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 3680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210282-PSMN030-150P,127
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN030-150P,127 CAD Model

Description

The PSMN030-150P,127 is a high-performance N-channel enhancement-mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and reliability in a wide range of applications, making it an ideal choice for power management tasks in both commercial and industrial settings.

With a drain-source voltage (V<sub>DS) of 150V, the PSMN030-150P,127 can handle significant voltage levels, making it suitable for high voltage applications. The device features a continuous drain current (I<sub>D) of 30A, ensuring it can support substantial current loads without overheating or failure. The low on-state resistance (R<sub>DS(on)) of the MOSFET minimizes conduction losses, contributing to its overall efficiency.

The PSMN030-150P,127 is housed in a robust TO-220 package, which is widely recognized for its thermal and mechanical resilience. The TO-220 package also allows for efficient heat dissipation, which is critical for maintaining performance and extending the lifespan of the MOSFET when operating at high currents or in high-temperature environments.

This MOSFET is designed with NXP's advanced silicon technology, which optimizes the device for fast switching, reduced gate charge (Q<sub>G), and low threshold voltage (V<sub>th). These features make the PSMN030-150P,127 an excellent choice for high-efficiency power supplies, DC-DC converters, motor drives, and other power conversion applications where switching losses need to be minimized.

Furthermore, the PSMN030-150P,127 incorporates protection features that safeguard the device under abnormal operating conditions. These include built-in diodes to protect against reverse voltage and over-voltage conditions, ensuring long-term reliability and stability.

In summary, the PSMN030-150P,127 from NXP Semiconductors is a powerful and versatile N-channel MOSFET that offers designers a balance of high performance, efficiency, and reliability. Its robust packaging and advanced features make it an excellent choice for a broad array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4720 $51.9120
50+ $2.0284 $101.4200
77+ $1.9650 $151.3050
106+ $1.9016 $201.5696
137+ $1.8382 $251.8334
183+ $1.6480 $301.5840
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 750 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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