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PSMN0R9-25YLC

Part No PSMN0R9-25YLC
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK / MOSFET N-CH 25V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6775pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 0.99 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 090954-PSMN0R9-25YLC
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name PSMN0R9-25YLC
Introduction Date December 02, 2010
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PSMN0R9-25YLC CAD Model

Description

Introducing the PSMN0R9-25YLC Power MOSFET by NXP Semiconductors

The PSMN0R9-25YLC is a state-of-the-art Power MOSFET brought to you by NXP Semiconductors, a leader in the electronics industry. This high-performance MOSFET is designed to meet the demanding requirements of modern power conversion applications, including power supplies, DC-DC converters, motor drives, and other high-efficiency power management systems.

Key Features

  • Ultra-Low On-Resistance: With an RDS(on) of just 0.9 mΩ at VGS = 10 V, this MOSFET ensures minimal conduction losses and exceptional efficiency, making it ideal for high-current applications.
  • 25 V Drain-Source Voltage: The PSMN0R9-25YLC can handle a maximum drain-source voltage of 25 V, providing a wide safety margin for various electronic circuits.
  • High Continuous Drain Current: It supports a continuous drain current (ID) of up to 380 A, allowing it to power through demanding tasks with ease.
  • Optimized Gate Charge: A low total gate charge (Qg) enhances the switching performance, which is crucial for high-frequency power switching applications.
  • Advanced Packaging: Encased in an LFPAK56 (Power-SO8) package, the PSMN0R9-25YLC offers excellent thermal performance and a compact footprint for space-constrained designs.

Applications

The versatility of the PSMN0R9-25YLC allows it to be used in a wide range of applications. Some of the typical use cases include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Battery Management Systems
  • Load Switching
  • Power Management for Computing and Telecom Systems

Reliability and Performance

NXP's commitment to quality ensures that the PSMN0R9-25YLC Power MOSFET is not only reliable but also delivers top-notch performance. Its robust design is capable of withstanding harsh conditions, making it a preferred choice for industrial and automotive applications that require high reliability and efficiency.

Whether you're designing power circuits for consumer electronics or industrial machinery, the PSMN0R9-25YLC by NXP Semiconductors is a solid choice that combines power efficiency with high current handling capability, all packed into a compact and durable package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5500 $54.2500
70+ $1.4500 $101.5000
110+ $1.4000 $154.0000
155+ $1.3000 $201.5000
200+ $1.2500 $250.0000
250+ $1.2000 $300.0000
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,889 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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