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SI9410DY,518

Part No SI9410DY,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SOT96-1
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 128580-SI9410DY,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI9410DY,518 CAD Model

Description

Product Overview: SI9410DY,518 from NXP

The SI9410DY,518 is a high-performance, N-channel MOSFET produced by NXP Semiconductors, a leader in the field of advanced electronic components. This MOSFET is designed to cater to a wide range of applications, offering a robust solution for power management tasks in various electronic devices.

Key Features

  • High Drain-Source Voltage (V<sub>DS): The SI9410DY,518 is capable of supporting a high drain-source voltage, which makes it suitable for operations in circuits that require high voltage levels.
  • Low On-Resistance (R<sub>DS(on)): The low on-resistance of this MOSFET ensures that power losses are minimized during operation, which enhances the overall efficiency of the electronic system.
  • High-Speed Switching: It is designed for fast switching applications, which is critical for power converters, motor controllers, and other applications that require quick transitions.
  • Advanced Silicon Technology: Utilizing NXP's cutting-edge silicon technology, the SI9410DY,518 offers superior performance and reliability.

Applications

The versatility of the SI9410DY,518 MOSFET allows it to be used in a multitude of applications, including but not limited to:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Switch mode power supplies (SMPS)
  • Load switches

Product Specifications

Some of the critical specifications of the SI9410DY,518 include:

  • Drain-Source Voltage (V<sub>DS): Specified at a high level to support various applications.
  • Continuous Drain Current (I<sub>D): The MOSFET can handle a significant amount of continuous current, making it ideal for high-power applications.
  • Gate-Source Voltage (V<sub>GS): The maximum gate-source voltage indicates the robustness of the gate oxide.
  • Power Dissipation (P<sub>D): Indicates the amount of power the MOSFET can dissipate, which is crucial for thermal management.
  • Operating Temperature Range: Ensures reliable operation across a broad range of environmental conditions.

In conclusion, the SI9410DY,518 from NXP Semiconductors is a high-quality, efficient N-channel MOSFET that offers excellent performance for a wide array of electronic applications. Its high-speed switching capability, low on-resistance, and ability to handle high voltages and currents make it a go-to choice for engineers and designers looking to improve their power management systems.

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