The 2N5322 from ON Semiconductor is a high-quality bipolar junction transistor (BJT) that offers reliable performance for a wide range of electronic applications. This NPN transistor is designed to handle moderate power levels while providing excellent amplification and switching characteristics, making it a versatile component for both analog and digital circuits.

Key Features

• Voltage & Current: The 2N5322 is capable of withstanding collector-emitter voltages up to 100V, and collector current up to 1A, making it suitable for medium power applications.
• Power Dissipation: With a power dissipation of 1W, this transistor can handle a fair amount of power, ensuring stable operation in various conditions.
• Gain: It offers a high current gain (hFE), which can range widely, providing flexibility in amplification requirements for different circuit designs.
• TO-39 Package: Encased in a metal TO-39 package, the 2N5322 ensures excellent heat dissipation and durability, contributing to its reliability and longevity in circuit implementations.

Applications

The 2N5322 is suitable for a variety of applications including, but not limited to:

• Audio amplifiers and pre-amps
• Signal processing
• Switching and linear applications
• Regulatory circuits
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the 2N5322 is no exception. Each transistor is manufactured with stringent quality control measures to ensure consistent performance. The 2N5322 is also backed by ON Semiconductor's reputation for reliability, making it a trustworthy choice for your circuit designs.

Environmental Compliance

Adhering to environmental standards, the 2N5322 is designed with eco-friendly materials, ensuring compliance with various international regulations. ON Semiconductor is dedicated to providing products that meet the highest standards of environmental safety.