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STB11NM65N

Part No STB11NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 650V 12A 3-Pin (2+Tab) D2PAK T/R
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Win Source Part Number 1019210-STB11NM65N
Categories Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian STB11NM65N CAD Model

Description

The STB11NM65N is a high-performance N-channel 650V MDmesh™ V Power MOSFET manufactured by STMicroelectronics. This device is a testament to STMicroelectronics' commitment to providing state-of-the-art power conversion solutions that combine efficiency and reliability for a wide range of applications.

Featuring the innovative MDmesh™ V technology, the STB11NM65N offers extremely low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), which translates into superior switching performance and lower power losses during operation. This makes it an ideal choice for high-efficiency power supplies, lighting applications, solar inverters, and industrial automation systems where energy conservation is of paramount importance.

The device comes in a robust and compact TO-220 package, ensuring easy integration into various circuit designs. It is designed to handle a continuous drain current (I<sub>D) of up to 11A, which makes it capable of supporting a broad range of power-intensive applications. Moreover, the STB11NM65N is characterized by a threshold voltage (V<sub>th) that ensures low gate drive requirements, enabling simpler and more cost-effective drive circuits.

With a maximum junction temperature of 150°C, the STB11NM65N is built to withstand harsh operating conditions, ensuring long-term stability and performance. The device also features a fast recovery diode, which is optimized for high-frequency switch-mode power supplies, further enhancing its efficiency in AC-DC conversion tasks.

Additional built-in protections, such as avalanche ruggedness and a 100% avalanche tested guarantee, provide an extra layer of security against unexpected voltage spikes, ensuring the MOSFET's durability and reliability. With these features, the STB11NM65N is not just a component but a dependable building block for any power management system.

STMicroelectronics provides comprehensive technical support and documentation for the STB11NM65N, including datasheets, application notes, and simulation models, facilitating the design-in process and helping engineers to optimize their applications.

In summary, the STB11NM65N from STMicroelectronics represents a blend of advanced technology, efficiency, and reliability, making it a top choice for designers looking to enhance the performance of their power conversion systems.

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