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2N5657G

Part No 2N5657G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 0.5A TO225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 350V
Vce Saturation (Maximum) @ Ib, Ic 10V @ 100mA, 500mA
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 30 @ 100mA, 10V
Power - Max 20W
Frequency - Transition 10MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 762260-2N5657G
Popularity Medium
Supply and Demand Status Limited
Family Name 2N5657
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian 2N5657G CAD Model

Description

ON Semiconductor 2N5657G JFET

The 2N5657G is a high-performance JFET (Junction Field Effect Transistor) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This particular JFET is well-suited for a variety of applications where high-frequency performance and low noise are required, making it an excellent choice for audio amplifiers, impedance buffers, and analog switches.

Key Features

  • High Gain: The 2N5657G offers high transconductance (g<sub>m), which translates into high gain when used in amplifier circuits.
  • Low Noise: With its low noise figure, it is ideal for audio applications or other sensitive electronic circuits where minimizing interference is crucial.
  • High Input Impedance: The high input impedance makes it a good choice for buffer stages in signal processing applications, as it does not load down preceding stages.
  • Low Leakage: The device exhibits very low leakage currents, which improves the overall stability and performance of the circuit.
  • Reverse Gate Source & Gate Drain Voltage: It can handle a reverse gate-source and gate-drain voltage of 25V, which provides a good margin for various electronic designs.
  • Forward Gate Current: The maximum forward gate current is 10mA, ensuring robust performance under different conditions.

Applications

The 2N5657G JFET is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • Low-noise audio amplifiers
  • High-fidelity audio preamplifiers
  • Analog switches
  • Buffer amplifiers
  • Sample and hold circuits
  • Active filters

Product Specifications

The 2N5657G is offered in a TO-92 package, which is compact and suitable for through-hole mounting, making it easy to integrate into various PCB designs. It operates over a wide temperature range, ensuring reliability and consistent performance even under challenging environmental conditions.

ON Semiconductor ensures that the 2N5657G meets rigorous quality and performance standards, providing engineers and designers with a reliable component for their electronic designs. With its combination of features, the 2N5657G JFET is an excellent choice for projects requiring high-quality signal amplification and processing.

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