ON Semiconductor 2N6338G Power Transistor

The 2N6338G is a high-quality power transistor designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This robust bipolar junction transistor (BJT) is engineered to deliver reliable performance in a wide array of power amplification and switching applications.

Key Features

• Type: NPN
• Package: TO-204 (TO-3)
• Voltage - Collector Emitter Breakdown (Max): 80V
• Current - Collector (Ic) (Max): 16A
• Power - Max: 150W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 4V
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole

Product Description

The 2N6338G transistor is encapsulated in a TO-204 (TO-3) metal can package, ensuring excellent heat dissipation and robustness for demanding environments. It is designed to handle high power levels, with a maximum collector current of 16A and a collector-emitter breakdown voltage of 80V. The device can dissipate up to 150W of power, making it suitable for high-power applications.

With a minimum DC current gain (hFE) of 20 at 8A and 4V, the 2N6338G ensures efficient operation in amplification circuits. The wide operating temperature range from -65°C to 200°C allows for usage in various industrial and commercial applications where temperature extremes are a concern.

Applications

The ON Semiconductor 2N6338G is versatile and can be used in various applications, including:

• Power supply regulators
• Audio amplifiers
• Switching circuits
• Motor controllers
• Linear amplifiers
• Other power switching applications

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2N6338G power transistor is no exception, offering reliable performance backed by ON Semiconductor's rigorous testing and quality control processes. This ensures that the 2N6338G is a solid choice for designers and engineers looking for a dependable power transistor for their electronic designs.