The 2SA1256-5-TB-E by ON Semiconductor is a high-quality PNP transistor designed for general-purpose amplifier and switching applications. This versatile component is a reliable choice for designers and engineers who require a dependable solution with good amplification characteristics.

Key Features

• Transistor Type: PNP - The 2SA1256-5-TB-E is a PNP type bipolar junction transistor (BJT), which means it is controlled by the movement of holes and is typically used for positive power supply designs.
• High Current Capability: This transistor can handle a continuous collector current (Ic) of up to 1A, making it suitable for moderate power applications.
• Low Saturation Voltage: It has a low collector-emitter saturation voltage, which enhances its efficiency by reducing power loss during operation.
• High Power Dissipation: With a power dissipation of 900mW, the 2SA1256-5-TB-E can withstand higher temperatures and power levels, increasing its reliability and lifespan.
• Operating Temperature Range: This device operates effectively within a temperature range of -55°C to +150°C, ensuring stable performance under varying environmental conditions.

Applications

The 2SA1256-5-TB-E is suitable for a wide range of applications, including:

• Audio frequency amplifier stages
• Signal processing
• Power management circuits
• Switching regulators
• Driver stages in hi-fi amplifiers and television circuits

Product Specifications

With its robust construction and ON Semiconductor's commitment to quality, the 2SA1256-5-TB-E is an excellent choice for your electronic projects and commercial product designs.