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2SA1417T-TD-E

Part No 2SA1417T-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 400mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 5V
Maximum Power Dissipation 500mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 132230-2SA1417T-TD-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1417T-TD-E CAD Model

Description

The 2SA1417T-TD-E is a high-quality bipolar transistor from ON Semiconductor, designed for use in a wide range of electronic applications. This PNP transistor is known for its reliability and efficiency, making it an ideal choice for designers and engineers looking to enhance their circuit designs.

Key Features

  • High Current Capacity: The 2SA1417T-TD-E is capable of handling high current loads, which is essential for applications that demand robust performance.
  • Low Saturation Voltage: This transistor offers low VCE(sat) voltage, which reduces power loss and improves overall efficiency, especially in saturation-driven operations.
  • High-Speed Switching: With its fast switching capabilities, the 2SA1417T-TD-E is suitable for applications requiring quick response times.
  • Compact Design: The transistor comes in a small surface-mount package, making it a space-saving solution for modern electronic devices.

Applications

The versatile nature of the 2SA1417T-TD-E allows it to be used in various applications, including:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Switching regulators
  • Driver stages in hi-fi amplifiers and television circuits

Specifications

Parameter Value Collector-Emitter Voltage (VCEO) -120 V Collector Base Voltage (VCBO) -120 V Emitter Base Voltage (VEBO) -5 V Collector Current (IC) -1.5 A Power Dissipation (PD) 25 W

In summary, the 2SA1417T-TD-E from ON Semiconductor is a robust PNP transistor that offers high current capacity, low saturation voltage, high-speed switching, and a compact package. It is well-suited for a variety of applications, making it a valuable component for any electronic project or product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3497 $50.7065
350+ $0.2870 $100.4500
540+ $0.2780 $150.1200
745+ $0.2690 $200.4050
965+ $0.2601 $250.9965
1,290+ $0.2332 $300.8280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 290 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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