The 2SA1417T-TD-E is a high-quality bipolar transistor from ON Semiconductor, designed for use in a wide range of electronic applications. This PNP transistor is known for its reliability and efficiency, making it an ideal choice for designers and engineers looking to enhance their circuit designs.
Key Features
- High Current Capacity: The 2SA1417T-TD-E is capable of handling high current loads, which is essential for applications that demand robust performance.
- Low Saturation Voltage: This transistor offers low VCE(sat) voltage, which reduces power loss and improves overall efficiency, especially in saturation-driven operations.
- High-Speed Switching: With its fast switching capabilities, the 2SA1417T-TD-E is suitable for applications requiring quick response times.
- Compact Design: The transistor comes in a small surface-mount package, making it a space-saving solution for modern electronic devices.
Applications
The versatile nature of the 2SA1417T-TD-E allows it to be used in various applications, including:
- Power management circuits
- Audio amplifiers
- Signal processing
- Switching regulators
- Driver stages in hi-fi amplifiers and television circuits
Specifications
Parameter
Value
Collector-Emitter Voltage (VCEO)
-120 V
Collector Base Voltage (VCBO)
-120 V
Emitter Base Voltage (VEBO)
-5 V
Collector Current (IC)
-1.5 A
Power Dissipation (PD)
25 W
In summary, the 2SA1417T-TD-E from ON Semiconductor is a robust PNP transistor that offers high current capacity, low saturation voltage, high-speed switching, and a compact package. It is well-suited for a variety of applications, making it a valuable component for any electronic project or product.