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2SB1216T-TL-H

Part No 2SB1216T-TL-H
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 4A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 4A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 200 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 130MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Package 2-TP-FA
Win Source Part Number 762490-2SB1216T-TL-H
Popularity Medium
Supply and Demand Status Limited
Family Name 2SB1216T
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian 2SB1216T-TL-H CAD Model

Description

Introducing the 2SB1216T-TL-H Power Transistor from ON Semiconductor

The 2SB1216T-TL-H is a high-performance PNP bipolar power transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is crafted to meet the needs of a wide range of electronic applications, offering reliability and efficiency in power management tasks.

Key Features

  • High Current Capacity: The 2SB1216T-TL-H is capable of handling continuous collector currents up to -3A, making it suitable for high-power applications.
  • Low V<sub>CE(sat): With a low collector-emitter saturation voltage, this transistor ensures reduced power loss and improved efficiency, especially critical in battery-operated devices.
  • High Power Dissipation: A power dissipation of 1.5W allows for better handling of energy and heat in circuit operations.
  • Complementary NPN Type Available: For applications requiring a complementary pair, the 2SB1216T-TL-H can be paired with an NPN type transistor to create a push-pull amplifier or other configurations.

Applications

The versatility of the 2SB1216T-TL-H makes it an excellent choice for a variety of electronic circuits. It is widely used in:

  • Power supply circuits
  • Audio amplifiers
  • DC-DC converters
  • Motor control circuits
  • Switching applications

Product Specifications

The 2SB1216T-TL-H comes in a compact package and is characterized by the following specifications:

Parameter Value Collector-Base Voltage (V<sub>CB) -50 V Collector-Emitter Voltage (V<sub>CE) -20 V Emitter-Base Voltage (V<sub>EB) -5 V Continuous Collector Current (I<sub>C) -3 A Power Dissipation (P<sub>D) 1.5 W

ON Semiconductor's commitment to quality ensures that the 2SB1216T-TL-H transistor meets the stringent requirements of electronic manufacturers, providing a reliable and effective component for power control and amplification tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8362 $58.5340
170+ $0.6872 $116.8240
265+ $0.6653 $176.3045
360+ $0.6433 $231.5880
465+ $0.6225 $289.4625
625+ $0.5579 $348.6875
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Availability: 7,138 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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