The ON Semiconductor 2SB817 is a robust power transistor designed to handle high-power audio frequency amplifier applications. This PNP silicon epitaxial planar transistor is renowned for its reliability and efficiency, making it an ideal choice for professional audio equipment.

Key Features

• High Current Capacity: With a collector current of up to 12A, the 2SB817 is capable of driving high-power circuits with ease.
• High Power Dissipation: A maximum power dissipation of 100W allows this transistor to handle significant energy without overheating, ensuring stable performance.
• High Collector-Emitter Voltage: A collector-emitter voltage (VCEO) of -140V provides a wide operating range, suitable for various audio applications.
• Complementary to 2SD1047: The 2SB817 is the PNP complement to ON Semiconductor's 2SD1047 NPN transistor, allowing for push-pull configurations in amplifier designs.

Applications

The 2SB817 transistor is commonly used in a variety of audio applications where high power and fidelity are crucial. Its applications include:

• High-power audio frequency amplifiers
• Professional audio equipment
• Power supply units
• DC-DC converters
• General-purpose switching applications

Technical Specifications

Parameter Value Collector-Base Voltage (VCBO) -160V Collector-Emitter Voltage (VCEO) -140V Emitter-Base Voltage (VEBO) -5V Collector Current (IC) -12A Power Dissipation (PD) 100W Operating Junction Temperature (Tj) -55°C to +150°C

For those seeking a high-performance solution for their audio amplification needs, the ON Semiconductor 2SB817 power transistor offers the reliability and power handling capabilities to deliver outstanding audio quality.