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2SC3650-TD-E

Part No 2SC3650-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 25V 1.2A 1500mW 4-Pin(3+Tab) PCP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 155924-2SC3650-TD-E
Popularity Low
Supply and Demand Status Balance
Family Name 2SC3650-TD-E
Introduction Date March 03, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SC3650-TD-E CAD Model

Description

2SC3650-TD-E - ON Semiconductor

The 2SC3650-TD-E is a high-performance NPN bipolar transistor from ON Semiconductor, designed to meet the needs of various electronic applications requiring efficient amplification and switching. This device is well-suited for use in power management, signal processing, and other general-purpose applications where reliability and efficiency are paramount.

Key Features:

  • High Current Gain Bandwidth Product: The 2SC3650-TD-E boasts a high fT, making it suitable for applications that require fast switching and amplification of high-frequency signals.
  • Low Collector-Emitter Saturation Voltage: This feature allows for lower power dissipation and improved efficiency, which is crucial for power-sensitive designs.
  • High Collector Current: Capable of handling a substantial collector current, the 2SC3650-TD-E is ideal for driving larger loads while maintaining stability and performance.
  • Robust Thermal Performance: With an excellent thermal dissipation capacity, the transistor can operate reliably over a wide temperature range, ensuring consistent performance under varying environmental conditions.

Applications:

  • Power Supplies
  • DC-DC Converters
  • Motor Control Circuits
  • Audio Amplifiers
  • Signal Amplification

The 2SC3650-TD-E transistor is housed in a compact package, making it a perfect choice for space-constrained applications. Its robust design ensures long-term reliability, a feature that ON Semiconductor is known for. Whether you're designing consumer electronics, industrial systems, or automotive applications, the 2SC3650-TD-E offers the performance and durability needed to create efficient, high-quality products.

Technical Specifications:

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (VCEO) 50V Collector-Base Voltage (VCBO) 60V Emitter-Base Voltage (VEBO) 7V Collector Current (IC) 2A Power Dissipation (Pd) 1W Operating Temperature Range -55°C to +150°C

Overall, the 2SC3650-TD-E from ON Semiconductor is a versatile and reliable component that can significantly enhance the performance of your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3603 $59.4495
395+ $0.2957 $116.8015
605+ $0.2864 $173.2720
835+ $0.2772 $231.4620
1,080+ $0.2680 $289.4400
1,445+ $0.2402 $347.0890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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