The 2SD1904S is a robust NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for high-speed switching applications and features a collector-emitter voltage (Vceo) of 60V, collector current (Ic) of 3A, and a power dissipation (Pc) of 25W, making it suitable for a wide range of electronic circuits.

Key Features

• High Collector-Emitter Voltage: With a Vceo of 60V, the 2SD1904S can handle moderate voltage levels, suitable for various electronic applications.
• High Collector Current: The transistor can manage a continuous collector current of up to 3A, making it capable of driving larger loads.
• Power Dissipation: A Pc of 25W allows the 2SD1904S to dissipate a significant amount of heat, contributing to its reliability and longevity in circuits.
• High-Speed Switching: Engineered for rapid transitions between on and off states, this transistor is ideal for high-speed switching applications.
• Low Saturation Voltage: It offers low collector-emitter saturation voltage, which enhances efficiency by minimizing power loss when in the on state.

Applications

The 2SD1904S is versatile and can be used in various applications including:

• Power supply circuits
• DC-DC converters
• Motor controllers
• Audio amplifiers
• Relay drivers
• Switching regulators

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The 2SD1904S is built to meet stringent requirements, ensuring performance and durability across its applications. With its excellent switching characteristics and thermal performance, this transistor is a dependable choice for designers looking to enhance their electronic designs.

Environmental Compliance

The 2SD1904S from ON Semiconductor is compliant with RoHS (Restriction of Hazardous Substances), reflecting the company's dedication to environmental responsibility and the production of eco-friendly products.