The 2SK2167-TD from ON Semiconductor is a high-performance N-channel silicon MOSFET designed to meet the needs of a variety of electronic applications. This power MOSFET is well-suited for high-speed switching applications due to its low on-resistance and high switching speeds.

Key Features

• Low On-Resistance: The device features an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency.
• High-Speed Switching: Engineered for high-speed switching, the 2SK2167-TD ensures that your circuits operate with high efficiency and minimal delay.
• Gate Charge: This MOSFET is optimized for low gate charge, which reduces the power required to drive the gate, resulting in lower switching losses.
• Drain-Source Voltage (Vdss): The device can handle a drain-source voltage of up to 60V, making it suitable for a wide range of applications.
• Continuous Drain Current (Id): It supports a continuous drain current, allowing for robust performance in high-demand situations.
• Power Dissipation: With its efficient thermal design, the 2SK2167-TD can dissipate power effectively, ensuring reliability even under high load conditions.

Applications

The ON Semiconductor 2SK2167-TD MOSFET is ideal for a diverse array of applications, including:

• Power supply units
• DC-DC converters
• Motor drives
• Automotive applications
• Switching regulators
• LED lighting systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the 2SK2167-TD is no exception. It is built to meet rigorous industry standards, ensuring performance and durability in even the most challenging environments.

Whether you are designing power management systems, industrial controls, or consumer electronics, the 2SK2167-TD from ON Semiconductor provides the efficiency, speed, and reliability required for your applications.