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BC807-16LT3G

Part No BC807-16LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Reel - TR
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 300 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number BC807
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number BC807-16LT3GOSTR,ONSONSBC807-16LT3G,BC807-16LT3GOSCT,BC807-16LT3G-ND,2156-BC807-16LT3G-OS,BC807-16LT3GOSDKR
Standard Package 10,000
Win Source Part Number 1324231-BC807-16LT3G
Ultra Librarian 3D Model Ultra Librarian BC807-16LT3G CAD Model

Description

ON Semiconductor BC807-16LT3G PNP Transistor

The BC807-16LT3G is a high-performance PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for general-purpose amplifier and switching applications, offering a robust and reliable solution for a wide range of electronic circuits. With its compact SOT-23 surface-mount package, the BC807-16LT3G is ideal for space-constrained applications where a small footprint is essential.

Key Features:

  • Transistor Polarity: PNP - This indicates that the BC807-16LT3G is a PNP transistor, suitable for use in the negative side of the circuit and designed to handle the flow of holes as charge carriers.
  • Collector-Emitter Voltage (Vceo): 45V - The maximum voltage between the collector and emitter terminals that the transistor can withstand when the base is open-circuited.
  • Collector Current (Ic): -500mA - The maximum continuous collector current that the transistor can pass without damage, making it suitable for moderate power applications.
  • DC Current Gain (hFE): 100 to 250 - This range indicates the transistor's ability to amplify the base current. A hFE of 100 means that a small base current can be amplified up to 100 times at the collector.
  • Power Dissipation (Pd): 250mW - The maximum power that the BC807-16LT3G can dissipate without exceeding its maximum junction temperature.
  • Operating Temperature Range: -55°C to +150°C - The device can reliably operate within this temperature range, making it suitable for various environmental conditions.

Applications:

The BC807-16LT3G is versatile enough to be used in a variety of applications, including but not limited to:

  • Signal amplification circuits
  • Power management systems
  • Switching circuits
  • Linear amplification stages
  • Driver stages in hi-fi amplifiers and television circuits

ON Semiconductor's commitment to quality ensures that the BC807-16LT3G meets the stringent requirements of the electronics industry. With its excellent amplification characteristics and low power consumption, this transistor is a go-to component for designers and engineers seeking performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,995+ $0.0251 $50.0745
4,855+ $0.0206 $100.0130
7,540+ $0.0199 $150.0460
10,365+ $0.0193 $200.0445
13,445+ $0.0186 $250.0770
17,965+ $0.0167 $300.0155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,033 pieces
MOQ: 1995 pcs
Order Increment : 1 pcs
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