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BU323ZG

Part No BU323ZG
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 350V 10A TO247 / Trans Darlington NPN 350V 10A 150000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 10A
Voltage - Collector Emitter Breakdown (Maximum) 350V
Vce Saturation (Maximum) @ Ib, Ic 1.7V @ 250mA, 10A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 500 @ 5A, 4.6V
Power - Max 150W
Frequency - Transition 2MHz
Operating Temperature Range -65°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 770616-BU323ZG
Popularity Medium
Supply and Demand Status Limited
Family Name BU323Z
Introduction Date September 22, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BU323ZG CAD Model

Description

ON Semiconductor BU323ZG NPN Power Transistor

The ON Semiconductor BU323ZG represents a robust and reliable NPN bipolar power transistor designed to meet the needs of high-voltage switching applications. This power transistor is a popular choice in the electronics industry due to its high current and voltage handling capabilities, making it suitable for a variety of demanding applications such as power supplies, motor controllers, and inverter circuits.

With a collector-emitter voltage (Vceo) of 400V and a collector current (Ic) rating of up to 15A, the BU323ZG is capable of handling significant power levels. The device also has a power dissipation (Pd) of 115W, which ensures that it can manage the heat generated during operation effectively, provided that suitable heat sinking is used.

The BU323ZG features a high DC current gain (hFE) range, which allows for efficient current amplification, making it an excellent choice for designs that require high efficiency. Its fast switching speeds are advantageous in circuits that demand quick response times, and its robustness is underscored by its high breakdown voltages.

ON Semiconductor has designed the BU323ZG with an emphasis on reliability and longevity. It comes in a TO-220 package, which is widely used and recognized for its ease of mounting and good thermal performance. The TO-220 package also allows for efficient heat dissipation, which is critical in maintaining the longevity of the transistor when operating at high power levels.

As with all ON Semiconductor products, the BU323ZG adheres to stringent quality standards, ensuring that it delivers consistent performance and reliability. Whether you're designing power regulators, amplifiers, or any other high-voltage application, the BU323ZG is a solid choice that combines power handling, efficiency, and reliability in a compact form factor.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to consult the official datasheet and technical documentation provided by ON Semiconductor. This will ensure the BU323ZG is used within its rated operational parameters for optimal performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2176 $57.9168
44+ $2.6401 $116.1644
68+ $2.5576 $173.9168
94+ $2.4751 $232.6594
121+ $2.3926 $289.5046
162+ $2.1451 $347.5062
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Availability: 5,300 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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