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SIHP6N40D-E3

Name: SIHP6N40D-E3
Brand: Vishay
SKU: 1277897
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SIHP6N40D-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHP6N40D-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	311 pF @ 100 V
Power Dissipation (Max)	104W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SIHP6
Other Names	SIHP6N40DE3
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277897-SIHP6N40D-E3
Ultra Librarian 3D Model	Ultra Librarian SIHP6N40D-E3 CAD Model

Alternative Products

Description

The Vishay SIHP6N40D-E3 is an N-Channel MOSFET that is widely used in various electronic applications.

Win Source part number: 1277897-SIHP6N40D-E3
Series: SIHP6
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 5V @ 250μA
Power Dissipation (Max): 104W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Vgs (Max): ±30V
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA

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