The ON Semiconductor CPH3449-TL-E is a high-performance N-Channel MOSFET designed for a wide range of applications that require efficient power management. This compact and versatile component is built using advanced trench technology, which ensures low on-resistance and minimal power loss during operation, making it an ideal choice for energy-sensitive designs.

Key Features

• Low On-Resistance: The CPH3449-TL-E features extremely low on-resistance, which translates to less power dissipation and improved overall efficiency.
• High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency power switching applications, offering improved performance for power supplies and converters.
• Low Threshold Voltage: The device operates at a low gate threshold voltage, making it compatible with low-voltage logic signals and easier to drive with a variety of control circuits.
• Surface-Mount Package: The CPH3449-TL-E comes in a compact CPH-3 package, which is designed for surface-mount technology, allowing for efficient use of PCB space and simplified assembly processes.

Applications

The versatility of the CPH3449-TL-E MOSFET makes it suitable for a broad range of applications, including:

• Power Management Circuits
• DC/DC Converters
• Motor Control Systems
• Switching Regulators
• LED Lighting Solutions

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 7A Power Dissipation (P<sub>D) 1.5W Gate Threshold Voltage (V<sub>GS(th)) 1.5V - 2.5V R<sub>DS(on) 20mΩ (typical)

In summary, the ON Semiconductor CPH3449-TL-E N-Channel MOSFET is a powerful and efficient solution for designers looking to optimize their power management systems. With its low on-resistance, high-speed switching, and compact form factor, this MOSFET is a valuable addition to any application where power efficiency is paramount.