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DTA124XET1

Part No DTA124XET1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 080839-DTA124XET1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DTA124XET1 CAD Model

Description

The DTA124XET1 from ON Semiconductor is a high-quality PNP transistor that has been meticulously engineered to provide excellent performance in a wide range of electronic applications. This small-signal transistor is a member of the extensive bipolar junction transistor (BJT) family and is specifically designed for surface mount technology (SMT), making it an ideal choice for compact circuit designs.

Key Features

  • Built-in Bias Resistor: The DTA124XET1 comes with an integrated bias resistor, which simplifies circuit design by reducing component count and saving space on printed circuit boards (PCBs).
  • High Power Dissipation: With a power dissipation of 200 mW, this transistor can handle moderate levels of power, making it suitable for a variety of applications.
  • Low V<sub>CE(sat): A low collector-emitter saturation voltage ensures efficient operation with minimal power loss, which is crucial for battery-powered devices.
  • High Current Gain: The DTA124XET1 boasts a high current gain (h<sub>FE), which allows for effective amplification of signals in electronic circuits.

Applications

The versatility of the DTA124XET1 makes it suitable for a wide array of applications. It is commonly used in:

  • Inverter and switching circuits
  • Signal processing
  • Power management
  • Audio amplifiers
  • Driver stages in amplifiers

Product Specifications

Parameter Value Package SOT-523 Collector-Emitter Voltage (V<sub>CEO) -50 V Emitter-Base Voltage (V<sub>EBO) -5 V Collector Current (I<sub>C) -100 mA Power Dissipation (P<sub>D) 200 mW Operating and Storage Junction Temperature Range -55 to +150 °C

In conclusion, the DTA124XET1 PNP transistor from ON Semiconductor is a reliable and efficient component that offers designers a compact solution with built-in bias resistors for a wide range of electronic applications.

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