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EC4H07C-TL

Part No EC4H07C-TL
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description BIP NPN 30MA 4V FT=10G / Bipolar (BJT) Transistor
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 10,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 870003-EC4H07C-TL
Ultra Librarian 3D Model Ultra Librarian EC4H07C-TL CAD Model

Description

The EC4H07C-TL from ON Semiconductor is a high-performance N-Channel Power MOSFET designed for a variety of applications that demand efficiency, reliability, and high power density. This compact, surface-mountable component is an essential building block in modern electronic systems, particularly in power management tasks.

Key Features

  • Low On-Resistance: The EC4H07C-TL boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for applications that require quick response times, such as SMPS (Switch Mode Power Supplies), DC-DC converters, and motor control circuits.
  • Enhanced Thermal Performance: The device is designed to handle high currents while maintaining a low thermal footprint, thanks to its excellent thermal management properties.
  • Robustness: ON Semiconductor's EC4H07C-TL is built to withstand harsh conditions, making it suitable for industrial and automotive applications that require high reliability.

Applications

The versatility of the EC4H07C-TL allows it to be used in a wide array of applications. Some common use cases include:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power management for consumer electronics

Technical Specifications

The EC4H07C-TL operates with a drain-source voltage (V<sub>DS) of 30V, and a continuous drain current (I<sub>D) of 60A, which makes it capable of handling significant power levels. The device's gate threshold voltage (V<sub>GS(th)) is specified to ensure easy driveability. Moreover, the MOSFET comes in a compact package, which is ideal for space-constrained applications.

Conclusion

ON Semiconductor's EC4H07C-TL N-Channel Power MOSFET is a testament to the company's commitment to providing high-quality, robust, and efficient components for the electronics industry. Its combination of low on-resistance, high switching speed, and excellent thermal performance make it a top choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,310+ $0.1767 $231.4770
1,690+ $0.1709 $288.8210
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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