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FCPF600N65S3R0L-F154

Part No FCPF600N65S3R0L-F154
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER SUPERFET MOSFET N-CHANNEL  /  N-Channel 650 V 6A (Tc) 24W (Tc) Through Hole TO-220F-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET® III
Package Tape & Reel (TR),Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 465 pF @ 400 V
Power Dissipation (Max) 24W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FCPF600N65S3R0L-F154DKR,488-FCPF600N65S3R0L-F154DKRINACTIVE,488-FCPF600N65S3R0L-F154CT,488-FCPF600N65S3R0L-F154DKR-ND,488-FCPF600N65S3R0L-F154TR
Standard Package 1,000
Win Source Part Number 1058690-FCPF600N65S3R0L-F154
Ultra Librarian 3D Model Ultra Librarian FCPF600N65S3R0L-F154 CAD Model

Description

ON Semiconductor FCPF600N65S3R0L-F154: A Robust Power MOSFET

The FCPF600N65S3R0L-F154 is a cutting-edge Power MOSFET device from ON Semiconductor, designed to deliver high efficiency and performance in a range of power applications. This semiconductor product is a part of ON Semiconductor's portfolio of energy-efficient devices, offering an optimal solution for engineers looking to enhance power management systems.

Key Features

  • High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, making it suitable for a variety of power conversion systems.
  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) of 0.3 ohms, which translates to reduced conduction losses and improved overall efficiency.
  • High Current Handling: With a continuous drain current (I<sub>D) of 22A, the FCPF600N65S3R0L-F154 is capable of managing significant current levels, making it ideal for high-power applications.
  • Fast Switching: The fast switching speed of this MOSFET minimizes switching losses and improves performance in applications where switching frequency is critical.
  • SuperFET<sup>® III Technology: Utilizing ON Semiconductor's proprietary SuperFET<sup>® III technology, this device offers low gate charge (Q<sub>G), reduced EMI, and robustness against hard commutation conditions.

Applications

The FCPF600N65S3R0L-F154 is versatile and can be used across a wide range of applications, including:

  • Power Supply Units (PSUs)
  • LED Lighting
  • Uninterruptible Power Supplies (UPS)
  • DC-AC Inverters for Solar Power Systems
  • Electric Vehicle (EV) Chargers
  • High-Frequency Welding Equipment

Package and Reliability

This MOSFET is housed in a TO-220F package, which is known for its reliability and thermal efficiency. The package design ensures that the device can be easily integrated into various circuit designs while providing excellent heat dissipation. Furthermore, the FCPF600N65S3R0L-F154 is designed to meet stringent reliability standards, ensuring long-term performance and stability in demanding environments.

With its robust features and flexible application range, the FCPF600N65S3R0L-F154 from ON Semiconductor stands out as a top choice for designers seeking to improve power efficiency and reliability in their electronic systems.

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