The FDB0190N807L from ON Semiconductor is a cutting-edge N-channel PowerTrench® MOSFET that is engineered to deliver high efficiency and power density for a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing innovative solutions that help designers meet the challenging demands of modern electronic circuits.

Key Features

• Low R<sub>DS(on): The FDB0190N807L boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications. This feature is especially beneficial in high-current environments.
• High Current Rating: With a continuous drain current (I<sub>D) of 119 A, this MOSFET can handle significant power, making it suitable for demanding tasks such as power supplies and motor control.
• Robust Thermal Performance: The device is encapsulated in a TO-263 (D2PAK) package, which is known for its excellent thermal characteristics, ensuring reliable operation even under high power dissipation scenarios.
• Fast Switching: The FDB0190N807L is designed with fast switching in mind, reducing switching losses and improving performance in high-frequency applications.

Applications

The versatility of the FDB0190N807L MOSFET makes it an ideal choice for a variety of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Switch mode power supplies (SMPS)
• High-efficiency power inverters

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 80 V Continuous Drain Current (I<sub>D) 119 A Power Dissipation (P<sub>D) 375 W R<sub>DS(on) 1.9 mΩ Package TO-263 (D2PAK)

With its robust design and high-performance capabilities, the FDB0190N807L MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.