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FDMS86369

Part No FDMS86369
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description FET 80V 7.5MOHM PQFN8 / N-Channel 80 V 65A (Tc) 107W (Tc) Surface Mount 8-DFNW (5.2x6.3)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-DFNW (5.2x6.3)
Package / Case 8-PowerTDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FDMS86369TR
Standard Package 3,000
Win Source Part Number 1058825-FDMS86369
Ultra Librarian 3D Model Ultra Librarian FDMS86369 CAD Model

Description

ON Semiconductor FDMS86369 PowerTrench® MOSFET

The FDMS86369 from ON Semiconductor is a state-of-the-art PowerTrench® MOSFET designed for high-efficiency power management applications. This advanced MOSFET is engineered to deliver exceptional performance in a compact footprint, making it an ideal choice for space-constrained designs that require efficient power conversion and management.

With a maximum drain-source voltage (VDS) of 80V, the FDMS86369 is well-suited for a wide range of applications, including DC-DC converters, motor drives, and power supplies in computing, consumer electronics, and industrial systems. The device boasts a low on-resistance (RDS(on)) of just 8.6 mΩ at VGS = 10V, which translates to reduced conduction losses and improved overall efficiency in the application.

The FDMS86369 incorporates ON Semiconductor's proprietary PowerTrench technology, which optimizes the MOSFET's structure to minimize on-state resistance while maintaining superior switching performance. This results in lower switching losses and better thermal management, a critical factor in maintaining the longevity and reliability of electronic systems.

The MOSFET is housed in a compact 5x6 mm Power 56 package, which provides excellent thermal performance and is compatible with standard surface-mount technology (SMT) processes. This package design allows for a simplified board layout and easier integration into a variety of circuit designs.

ON Semiconductor's FDMS86369 also features a 100% avalanche tested design, ensuring robustness and reliability under extreme conditions. The device is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability and regulatory compliance.

In summary, the FDMS86369 PowerTrench MOSFET from ON Semiconductor is an exceptional choice for designers looking to enhance power efficiency and performance in their next-generation electronic products. Its combination of low on-resistance, high switching speed, and thermal efficiency makes it a versatile component in any high-performance power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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