The MBT3904DW1T1 from ON Semiconductor is a high-performance bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small signal transistor is renowned for its reliability and efficiency, making it an ideal choice for designers looking for a general-purpose solution.

Key Features

• Dual NPN Transistor: This device contains two NPN transistors in a single package, providing matched pair performance that is beneficial for applications requiring closely matched transistor characteristics.
• High Current Gain: With a high current gain (hFE) bandwidth product, the MBT3904DW1T1 offers excellent amplification capabilities for both analog and digital signals.
• Low Voltage Operation: Designed to operate at low voltages, it is suitable for low power consumption applications, which is critical for battery-powered devices.
• Surface-Mount Package: The SOT-363 package is compact and suitable for surface-mount technology (SMT), making it easy to integrate into a variety of circuit boards.
• RoHS Compliant: Adhering to environmental standards, this product is RoHS compliant, minimizing the environmental impact by restricting the use of certain hazardous substances.

Applications

The versatility of the MBT3904DW1T1 allows it to be used in numerous applications, including:

• Signal processing
• Switching and amplification circuits
• Audio amplifiers
• Driver stages in hi-fi systems
• Linear amplification and switching

Technical Specifications

Parameter Value Configuration Dual NPN Collector-Emitter Voltage (VCEO) 40V Collector-Base Voltage (VCBO) 60V Emitter-Base Voltage (VEBO) 6V Collector Current (IC) 200 mA Power Dissipation (Pd) 225 mW DC Current Gain (hFE) 100 to 300

ON Semiconductor's commitment to quality ensures that the MBT3904DW1T1 transistor meets the needs of the most demanding applications, providing both performance and durability.