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MBT3904DW1T3G

Part No MBT3904DW1T3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 099944-MBT3904DW1T3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MBT3904DW1T3G CAD Model

Description

ON Semiconductor MBT3904DW1T3G Product Description

The ON Semiconductor MBT3904DW1T3G is a high-performance dual general-purpose transistor designed to meet the needs of a wide array of electronic applications. This versatile device features two NPN transistors in a single SOT-363 package, providing designers with a compact solution for their circuit designs. The MBT3904DW1T3G is well-suited for use in various applications such as signal processing, amplification, and switching.

Key Features

  • Transistor Type: The MBT3904DW1T3G consists of dual NPN transistors, which are widely used for their fast switching and amplification capabilities.
  • Package: It comes in a small SOT-363 surface-mount package, allowing for high-density mounting and saving valuable board space.
  • Current Rating: Each transistor can handle a continuous collector current of up to 200 mA, making it suitable for moderate power applications.
  • Voltage Ratings: The device supports a collector-emitter voltage (Vceo) of up to 40V, ensuring robust performance for a range of voltage requirements.
  • Low Saturation Voltage: It exhibits low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 300 MHz, the MBT3904DW1T3G is capable of operating at high frequencies, suitable for RF and high-speed signal applications.

Applications

The MBT3904DW1T3G's dual-transistor configuration makes it ideal for applications that require matched transistor pairs. This includes, but is not limited to, differential signal amplification, push-pull stages, and multistage amplifiers. Additionally, its high-frequency performance is well-suited for RF signal amplification and mixing, as well as high-speed switching in digital circuits.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MBT3904DW1T3G is no exception. This product is manufactured to high standards, ensuring reliable performance in even the most demanding conditions. Its robust construction is designed to withstand the rigors of everyday use, making it a trusted choice for both commercial and industrial applications.

In summary, the ON Semiconductor MBT3904DW1T3G is a highly reliable and efficient solution for designers looking for a dual NPN transistor capable of handling moderate power levels while providing high-frequency performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
900+ $0.0625 $56.2500
2,185+ $0.0513 $112.0905
3,390+ $0.0496 $168.1440
4,665+ $0.0480 $223.9200
6,025+ $0.0465 $280.1625
8,065+ $0.0417 $336.3105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 900 pcs
Order Increment : 1 pcs
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