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MCH3420-TL-E

Part No MCH3420-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MCH3420 - N-CHANNEL SILICON MOSF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 1.85mOhm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 20 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 3-MCPH
Package / Case 3-SMD, Flat Leads
Standard Package 1 pcs
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 225328-MCH3420-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH3420-TL-E CAD Model

Description

The MCH3420-TL-E is a high-performance, P-Channel MOSFET brought to you by ON Semiconductor, a leader in the field of energy-efficient innovations. This semiconductor device is designed to deliver efficient power management and is particularly suitable for compact and low-power applications.

Key Features:

  • Low On-Resistance: The device features a low on-resistance, which translates to reduced power loss during operation and enhances overall efficiency.
  • High-Speed Switching: With its ability to switch at high speeds, the MCH3420-TL-E is ideal for applications that require rapid power cycling and precise power control.
  • Compact SOT-723 Package: The small surface-mount package is perfect for space-constrained applications, allowing designers to minimize PCB footprint without sacrificing performance.
  • Drain-Source Voltage: It supports a drain-source voltage (Vds) of -20V, which is adequate for a variety of low-voltage applications.
  • Gate Threshold Voltage: The device has a gate threshold voltage (Vgs(th)) of -0.8V, enabling it to be driven by low-voltage control signals.
  • Continuous Drain Current: It offers a continuous drain current (Id) of -1A, providing sufficient current handling capability for many electronic designs.

Applications:

The MCH3420-TL-E is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • Power management modules
  • Battery-powered devices
  • Load switch circuits
  • Portable electronic devices
  • DC/DC converters

ON Semiconductor's commitment to reliability and performance is evident in the MCH3420-TL-E P-Channel MOSFET. It is a solid choice for designers looking to enhance the power efficiency and compactness of their electronic systems. With its robust feature set and versatile applications, this MOSFET is poised to meet the demands of modern electronic designs.

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