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MCH5809-TL-E

Part No MCH5809-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NCH+SBD 2.5V DRIVE SERIES / RF Mosfet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 225355-MCH5809-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH5809-TL-E CAD Model

Description

ON Semiconductor MCH5809-TL-E

The MCH5809-TL-E is a cutting-edge power MOSFET from ON Semiconductor, renowned for its high efficiency and reliability in a variety of power management applications. This device is specifically designed to meet the rigorous demands of modern electronic circuits, providing an optimal solution for switching applications that require low on-resistance, high-speed switching, and minimal power loss.

With an advanced trench technology, the MCH5809-TL-E boasts an impressive R<sub>DS(on) value, which significantly reduces conduction losses and enhances overall device performance. This feature makes it an excellent choice for high-efficiency power supplies, DC-DC converters, and other power conversion systems where energy conservation is paramount.

The MCH5809-TL-E operates at a continuous drain current of up to several amperes, with a drain-source voltage rating that ensures safe operation even under high voltage conditions. This robustness is further complemented by its ability to withstand high pulse currents, making it suitable for applications that experience transient loads or require fast switching.

ON Semiconductor has packaged the MCH5809-TL-E in a compact, surface-mount package, allowing for high-density board designs and efficient thermal management. This small footprint does not compromise the MOSFET's thermal performance, as it is designed to handle significant power dissipation, ensuring stability and long-term reliability.

Additionally, the MCH5809-TL-E is characterized by its low gate charge, which translates to reduced switching losses. This characteristic, combined with its fast switching speed, makes the MOSFET an ideal component for high-frequency applications. The device also includes built-in protection features, such as overcurrent and thermal shutdown, to safeguard against abnormal operating conditions and extend the lifespan of the end product.

In summary, the MCH5809-TL-E from ON Semiconductor is a high-performance, energy-efficient power MOSFET that offers designers a reliable and versatile component for their power management solutions. Its robust design, coupled with ON Semiconductor's commitment to quality, ensures that this MOSFET will deliver exceptional performance in a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0951 $58.0110
1,480+ $0.0781 $115.5880
2,295+ $0.0757 $173.7315
3,155+ $0.0732 $230.9460
4,085+ $0.0707 $288.8095
5,465+ $0.0634 $346.4810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 73,300 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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