Product Overview: MGSF1N02ELT1G by ON Semiconductor

The MGSF1N02ELT1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced solutions for power management and efficiency across a wide range of applications.

Key Features

• Device Type: Power MOSFET
• Channel Type: N-Channel
• Drain-to-Source Voltage (V<sub>DS): 20V
• Continuous Drain Current (I<sub>D): 680mA
• Power Dissipation (P<sub>D): 1.25W
• R<sub>DS(on): Low on-resistance for higher efficiency
• Package: SOT-23 (TO-236) surface-mount package
• Qualification: AEC-Q101 qualified for automotive applications
• RoHS Compliant: Yes

Applications

The MGSF1N02ELT1G is suitable for a variety of applications that require efficient power management. Its robustness and reliability make it ideal for:

• Automotive systems
• Power management circuits
• DC-DC converters
• Battery powered devices
• Load switch applications
• Portable electronics

Performance and Quality

ON Semiconductor's MGSF1N02ELT1G MOSFET is designed to deliver superior switching performance and high durability. With its low threshold voltage and high energy efficiency, it ensures minimal power loss during operation, contributing to the extended battery life of portable devices. The device's SOT-23 package is optimized for compact circuit designs, making it an excellent choice for space-constrained applications.

Environmental Compliance

As an environmentally responsible component, the MGSF1N02ELT1G complies with RoHS standards, ensuring that it is free from hazardous substances. This compliance reflects ON Semiconductor's dedication to environmental sustainability and the promotion of greener electronic solutions.