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MJD42CT4G

Part No MJD42CT4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 6A DPAK-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 6A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 1.5V @ 600mA, 6A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 15 @ 3A, 4V
Maximum Power Dissipation 1.75W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Win Source Part Number 003630-MJD42CT4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJD42CT4G CAD Model

Description

ON Semiconductor MJD42CT4G Power Transistor

The ON Semiconductor MJD42CT4G is a high-performance power transistor designed to deliver efficient power management and control in a wide range of applications. This device is a part of the MJD series, which is renowned for its reliability and versatility, making it an ideal choice for designers looking to optimize their power circuitry.

The MJD42CT4G is a Bipolar Power Transistor that uses a PNP configuration. It is capable of handling collector currents up to 6A, making it suitable for moderate to high power applications. With a collector-emitter voltage (VCEO) of 100V, this transistor can easily manage the demands of circuits operating at higher voltages.

This power transistor is housed in a compact DPAK (TO-252) surface-mount package, which not only saves valuable board space but also ensures improved thermal performance compared to traditional through-hole packages. The DPAK package allows for efficient heat dissipation, which is critical in maintaining stability and longevity of the device under high power conditions.

One of the key features of the MJD42CT4G is its fast switching speed, which makes it an excellent choice for switching applications, such as power supply regulators, converters, and motor control circuits. The fast switching capability ensures that the transistor can handle high-frequency operations with minimal losses, contributing to the overall efficiency of the system.

The MJD42CT4G also boasts a low collector-emitter saturation voltage, which minimizes on-state power dissipation, further enhancing the energy efficiency of the applications it is used in. This feature, combined with the high current handling capability, makes the MJD42CT4G a robust component for power amplification and switching applications.

In summary, the ON Semiconductor MJD42CT4G is a powerful and efficient PNP power transistor that offers designers a reliable solution for a variety of high-performance applications. Its compact footprint, high voltage and current handling capabilities, fast switching speeds, and low saturation voltage make it a versatile component that enhances the performance and reliability of power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3643 $51.0020
295+ $0.3412 $100.6540
455+ $0.3297 $150.0135
655+ $0.3066 $200.8230
850+ $0.2951 $250.8350
1,060+ $0.2836 $300.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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