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MJE15030G

Part No MJE15030G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 150V 8A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100μA
Typical Gain (hFE) (Min) 20 @ 4A, 2V
Maximum Power Dissipation 50W
Frequency - Transition 30MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 058926-MJE15030G
Ultra Librarian 3D Model Ultra Librarian MJE15030G CAD Model

Description

ON Semiconductor MJE15030G Power Transistor

The MJE15030G is a high-performance bipolar power transistor from ON Semiconductor, designed for use in a wide range of power amplification and switching applications. This silicon transistor is a part of the MJE15030 series, which is renowned for its high-speed and high-voltage capabilities, making it an ideal choice for audio amplifiers, power supplies, and other demanding electronic circuits.

The MJE15030G is characterized by its exceptional speed and power handling capabilities. With a collector-emitter voltage (VCEO) of 150V and a collector current (IC) of up to 8A, it can handle significant power levels. Its transition frequency (fT) of 30MHz ensures that it can operate efficiently at high frequencies, which is crucial for applications such as RF amplification.

One of the key features of the MJE15030G is its SOA (Safe Operating Area) robustness, which ensures reliable operation under varying conditions. The device is also equipped with an integrated anti-saturation circuit, which helps to prevent device failure due to excessive current and power dissipation.

The construction of the MJE15030G transistor allows for excellent thermal performance. It is housed in a TO-220 package, which is known for its ability to dissipate heat effectively. This packaging, combined with the transistor's low saturation voltage, contributes to its overall efficiency and longevity.

For design flexibility, the MJE15030G can be paired with its complementary PNP partner, the MJE15031G, to create push-pull configurations commonly used in high-fidelity audio amplification. This pairing allows for a balanced and efficient design, capable of delivering high-quality audio performance.

ON Semiconductor's commitment to quality is evident in the MJE15030G's ratings and certifications. It complies with the RoHS directive, which means it is free from hazardous substances, making it suitable for use in environmentally sensitive applications.

In conclusion, the MJE15030G from ON Semiconductor is a reliable and powerful transistor that provides designers with an excellent option for creating high-performance electronic circuits. Its robust construction, high-speed operation, and thermal efficiency make it a top choice for professionals seeking components that deliver consistent and high-quality results.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9359 $51.4745
135+ $0.7679 $103.6665
205+ $0.7439 $152.4995
280+ $0.7199 $201.5720
360+ $0.6959 $250.5240
485+ $0.6239 $302.5915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,860 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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