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MJH11017

Part No MJH11017
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 150V 15A TO218
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP - Darlington 150 V 15 A 3MHz 150 W Through Hole SOT-93
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-218-3
Case / Package SOT-93
Family Name MJH11
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 30
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 884922-MJH11017
Ultra Librarian 3D Model Ultra Librarian MJH11017 CAD Model

Description

ON Semiconductor MJH11017 Power Transistor

The MJH11017 is a robust power transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-power NPN transistor is specifically engineered to handle high load currents and to switch at high speeds, making it an ideal choice for a wide range of applications, including power regulation, amplification, and switching.

Constructed with state-of-the-art silicon technology, the MJH11017 boasts a collector-emitter voltage (Vceo) of 150V, which enables it to withstand substantial voltage spikes without degradation. Its collector current (Ic) is rated at 30A, providing the capability to drive large loads with ease. The power dissipation (Pd) is an impressive 200W, which ensures reliable operation even under high power conditions.

One of the key features of this power transistor is its high DC current gain (hFE), which ranges from 15 to 60 at a collector current of 15A. This high gain allows for better amplification of signals, resulting in efficient performance. Moreover, the MJH11017 comes in a TO-247 package, known for its excellent thermal conduction properties. This package design helps to maintain thermal stability and extends the operational lifespan of the device by effectively dispersing heat during high-power applications.

The MJH11017 also incorporates several safety features. It has a built-in reverse-biased safe operating area (RBSOA), which provides protection against unexpected voltage transients. Additionally, the device is equipped with a fast switching speed that minimizes the time spent in the transition region, thus reducing the risk of thermal runaway.

ON Semiconductor's commitment to quality is evident in the MJH11017 power transistor. It is designed for reliability and performance, meeting the stringent requirements of industrial and consumer applications. Whether it's for audio amplifiers, DC-DC converters, or motor control circuits, this power transistor is an excellent choice for designers who need a high-performing, durable component.

With its combination of high power handling, fast switching speeds, and thermal efficiency, the MJH11017 from ON Semiconductor stands out as a top-tier component for demanding power applications.

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