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MMBT3906WT1

Part No MMBT3906WT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS SS GP PNP 40V SOT323 / Bipolar (BJT) Transistor
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Cut Tape (CT)
Product Status Obsolete
Base Product Number MMBT3906
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 805322-MMBT3906WT1
Ultra Librarian 3D Model Ultra Librarian MMBT3906WT1 CAD Model

Description

ON Semiconductor MMBT3906WT1 PNP Transistor

The MMBT3906WT1 is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, a leading figure in the semiconductor industry. This small-signal transistor is designed for general-purpose amplifier and switching applications, making it a versatile component for a wide range of electronic circuits.

Constructed with ON Semiconductor's innovative technologies, the MMBT3906WT1 offers excellent performance in a compact SOT-323 package. Its small footprint allows for high-density PCB layouts, which is particularly beneficial in space-constrained applications. The device is characterized by its low on-state voltage, ensuring efficient operation and reduced power loss.

Key Features:

  • PNP Bipolar Junction Transistor: The MMBT3906WT1 is a PNP transistor, which means it is designed to pass current predominantly from the emitter to collector when a sufficient negative base current is applied.
  • High Current Gain (hFE): This transistor offers a high current gain, typically around 100 to 300, providing significant amplification of the input signal.
  • Collector-Emitter Voltage (VCEO): It can handle a maximum collector-emitter voltage of 40V, making it suitable for a variety of medium voltage applications.
  • Collector Current (IC): The MMBT3906WT1 can manage a continuous collector current of up to 200mA, which is adequate for many signal processing tasks.
  • Power Dissipation: It has a total device dissipation of 225mW, allowing it to withstand moderate levels of power during operation.
  • Operating Temperature Range: The device operates effectively within a temperature range of -55°C to +150°C, ensuring reliability under varying environmental conditions.

The MMBT3906WT1 is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability. The transistor's performance and reliability are backed by ON Semiconductor's rigorous quality control standards, making it a trusted choice for engineers and designers looking for a reliable PNP transistor for their electronic designs.

Whether you're developing consumer electronics, industrial control systems, or portable devices, the MMBT3906WT1 offers the performance and compact size needed to create efficient and innovative solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5,620+ $0.0103 $57.8860
13,515+ $0.0085 $114.8775
21,130+ $0.0082 $173.2660
28,990+ $0.0080 $231.9200
37,315+ $0.0078 $291.0570
50,000+ $0.0069 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 147,100 pieces
MOQ: 5620 pcs
Order Increment : 1 pcs
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