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MMBT4401LT1

Part No MMBT4401LT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 600MA SOT23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
Power - Max 225 mW
Frequency - Transition 250MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMBT4401
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 852310-MMBT4401LT1
Ultra Librarian 3D Model Ultra Librarian MMBT4401LT1 CAD Model

Description

MMBT4401LT1 - ON Semiconductor

The MMBT4401LT1 is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This small-signal transistor is designed for general-purpose amplifier and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features

  • Transistor Polarity: NPN - Offering efficient switching and amplification with a positive current flow from collector to emitter.
  • Collector-Emitter Voltage (Vceo): 40V - Provides a robust voltage rating for handling typical signal levels in electronic applications.
  • Collector-Base Voltage (Vcbo): 60V - Allows for a higher breakdown voltage between the collector and base, contributing to the device's stability and reliability.
  • Emitter-Base Voltage (Vebo): 6V - Ensures a safe operating range for the base-emitter junction, preventing breakdown during operation.
  • Continuous Collector Current (Ic): 600 mA - Supports a substantial current flow for driving loads or for signal amplification.
  • Power Dissipation (Pd): 350 mW - Adequate power handling capability for a variety of light to medium power requirements.
  • DC Current Gain (hFE): 100 to 300 - Offers a high level of amplification factor, which is crucial for signal processing applications.
  • Package / Case: SOT-23-3 - A compact surface-mount package that is suitable for automated assembly processes and space-constrained applications.

Applications

The MMBT4401LT1 is ideal for use in:

  • General-purpose amplification
  • Switching circuits
  • Linear amplification stages
  • Driver stages in hi-fi amplifiers and television circuits
  • Signal processing
  • Portable and consumer electronics

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the rigorous demands of the electronics industry. The MMBT4401LT1 is manufactured with state-of-the-art technology and is subjected to stringent quality control processes to ensure reliability and performance in critical applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,015+ $0.0166 $50.0490
6,455+ $0.0155 $100.0525
10,000+ $0.0150 $150.0000
14,390+ $0.0139 $200.0210
18,660+ $0.0134 $250.0440
23,260+ $0.0129 $300.0540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 896,060 pieces
MOQ: 3015 pcs
Order Increment : 1 pcs
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