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MMDF3N02HDR2G

Part No MMDF3N02HDR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 630pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1078377-MMDF3N02HDR2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMDF3N02HDR2G CAD Model

Description

ON Semiconductor MMDF3N02HDR2G Overview

The MMDF3N02HDR2G is a high-performance MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This product is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications, from automotive systems to industrial power systems.

Key Features

  • Device Type: MOSFET
  • Channel Type: N-Channel
  • Drain-to-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 3.7A
  • R<sub>DS(on): 85 mOhms at V<sub>GS = 4.5V
  • Package: Micro8™
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C to +150°C

Performance and Durability

The MMDF3N02HDR2G boasts a robust thermal performance, ensuring reliability and longevity even under high temperature operating conditions. Its low on-resistance minimizes conduction losses, making it an energy-efficient choice for power-intensive applications. The device is capable of handling continuous drain currents up to 3.7A, which makes it suitable for high current applications.

Applications

With its versatile features, the MMDF3N02HDR2G is ideal for a variety of applications. It is commonly used in power management circuits, DC-DC converters, load switches, and motor control circuits. Its compact Micro8™ package is particularly beneficial for space-constrained applications, allowing designers to reduce the size of their PCB layouts without compromising on power handling capabilities.

Quality and Reliability

ON Semiconductor's commitment to quality is evident in the MMDF3N02HDR2G MOSFET. The device is designed to meet stringent industry standards, ensuring high reliability and performance consistency. It operates over a wide temperature range, from -55°C to +150°C, which guarantees stability across various environmental conditions.

Environmental Compliance

The MMDF3N02HDR2G is also environmentally friendly, complying with RoHS directives which restrict the use of certain hazardous substances in electronic equipment. This commitment to environmental sustainability makes the MMDF3N02HDR2G a responsible choice for eco-conscious businesses and consumers.

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